1. Characterization of Diamond Thin Films grown on Silicon Substrates by Hot Filamment Chemical Vapor Deposition Technique: The dependence of electrical properties of diamond thin films e.g. sheet resistivity from four-point probe, electron concentration and mobility by Hall effect experiments are correlated with the phase and quality of diamond (graphite or amorphous carbon vs. crystalline) obtained by a Raman spectrometer. Scanning electron microscope observations (faceted vs. cauliflower-type balls) are correlated to growth parameters such as methane to hydrogen ratio, substrate temperature and system pressure.
AK. Kulkarni, K. Tey, H. Rodrigo , "Electrical characterization of CVD diamond thin films grown on silicon substrates," Thin Solid Films 270 ( 1995) 189-193
2. Electrical and Structural Characteristics of Chromium Thin Films Deposited on Glass and Alumina Substrates: The electrical resistivities od electron beam deposited and sputter deposited chromium thin films on glass and alumina substrates were correlated with the structural composition and properties of the films obtained by Auger electron spectrometer, x-ray diffraction and scanning electron microscope.
A.K. Kulkarni, L.C. Chang, "Electrical and structural characteristics of chromium thin films deposited on glass and alumina substrates," Thin Solid Films 301
3. Reliability of Solder Joints used in Leadless Surface Mount Devices: A study on the failure mechamisms due to the effects of high temperature storage on the solder joints of leadless surface mount devices was conducted.
4. Development of Thin Film Ferroelectric Memory Devices: Thin film ferroelectric memory devices display ideal memory characteristics such as nonvolatility, radiation hardness, high packing density and fast switching times. One of the major problems affecting the long term performance of these devices is identified as fatigue. A detailed investigation on the electrical, structural and fatigue characteristics of thin film ferroelectric memory devices fabricated from potassium nitrate-phase III was conducted, From the hysteresis, C-V and I-V measurements, it was concluded that fatigue was caused by the trapping of mobile ions at the metal/ferroelectric interface.
5. Schottky and Ohmic Contacts to GaAs: The reliability of alloyed ohmic contacts to GaAs has been a weak link in GaAs MESFETs used in high speed digital and microwave circuits. A detailed investigation of AuGe ohmic contacts to GaAs was carried out to determine the out diffusion of gallium into gold and in diffusion of germanium into the GaAs surface layer. Refractory metal and refractory silicide contacts to GaAs were investigated to improve the stability and reliability of the Schottky contacts to GaAs.
A.K. Kulkarni, J.T. Lukowski, "Effects of annealing process parameters on the properties of AuGe ohmic contacts to GaAs," J. Appl. Phys. 59 (8), 15 April 1986
A.K. Kulkarni, L Jianhua, "Schottky Barrier Enhancement in Ni/Al Layer-by-Layer Contacts to n-GaAs," IEEE University/Government/Microelectronics Symposium (1991) 216-221